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(R)
PKC-136
PEAK CLAMP
Application Specific Discretes ASDTM
MAIN PRODUCT CHARACTERISTICS VBR VDRM P 160Vdc 700Vdc 1.5W
FEATURES Protection of the Mosfet in flyback power supply TRANSILTM and blocking diode in a single package
s s
BENEFITS Accurate voltage clamping regardless load Reduced current loop Reduced EMI emission High integration Fast assembly Reduced losses in stand by mode
s s s s s s
DO-15
BASIC CONNECTION
Lf T D Io
Vo
ABSOLUTE MAXIMUM RATINGS (limiting values) Symbol Tstg Tj P Storage temperature Junction temperature Maximum power dissipation Tlead = 90C Parameter Value - 40 to + 150 150 1.5 Unit C C W
August 2001 - Ed: 2A
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ELECTRICAL CHARACTERISTICS TRANSIL Value Symbol IRM VBR Rd Parameter Leakage current Breakdown voltage Dynamical Resistance Test conditions Min. VR = 136V IR = 1mA pulse test < 50ms tp < 500ns between I = 0.5Amps and I = 1.5Amps Tj = 25C Tj =125C Tj = 25C Tj = 125C Typ. Max. 1 10 170 4 A V Unit
150
160
T VsCL
Temperature Coefficient Surge Clamping voltage Ipp = 2.7Amps 10/1000s
10.8 219
10-4/C V
CALCULATION OF THE CLAMPING VOLTAGE: In repetitive mode and for low current rating, use the equation (1) and (2) to calculate the breakdown voltage VBR of the transil versus the operating junction temperature and use the equation (3) to calculate the clamping voltage versus the transil current Ipp and the temperature. V BR = T (Tj - 25 )V BR ( 25 C ) (1)
V BR (Tj ) = V BR ( 25 C ) + V BR V CL (Tj ) = V BR (Tj ) + Rd .Ipp
(2) (3)
ELECTRICAL CHARACTERISTICS DIODE (Tj = 25C unless otherwise specified) Symbol IR VRRM trr VFP Parameter Reverse leakage current Repetitive Peak Reverse Voltage Reverse Recovery Time Peak Forward Voltage Tests conditions VR = VRRM Tj = 25C IF = 1A dIF / dt = -50A/s VR = 30V IF = 3A dIF / dt = 100A/s Tj = 25C Tj = 125C Tj = 25C Tj = 125C 700 45 12 18 3 Value Min. Typ. Max. 3 20 V ns V Unit A
CAPACITANCE Symbol C Parameter Total Parasitic capacitance 1MHz 30mV Typical Value 35 Unit pF
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THERMAL RESISTANCES Symbol Rth(j-l) Rth(j-a) Junction to leads Parameter L = 10mm Value 40 105 Unit C/W C/W
Junction to ambiant condition see note 1
Note 1: Device mounted on a epoxy FR4 board of 35m thickness Lead Length: 10mm Pad diameter: 4mm Track width: 1mm Track length: 25mm The Rth(j-a) can be reduced by replacing the Cu track by plan: S(Cu) = 1.5cm2/lead Rth(j-a) = 65C/W S(Cu) = 3.5cm2/lead Rth(j-a) = 60C/W Fig. 1: Peak pulse power versus exponential pulse duration.
Pp(kW)
1.E+02
Tj initial=25C
Fig. 2: Relative variation of peak pulse power versus initial junction temperature.
%
110 100 90 80
1.E+01
70 60 50
1.E+00
40 30 20
tp(ms)
1.E-01 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
10 0 0 25 50 75
Tj(C)
100 125 150 175
Fig. 3: Average power dissipation versus ambient temperature.
P(W)
1.8 1.6 1.4 1.2 1.0 0.8
Printed circuit board Tamb =Tleads
Fig. 4: Variation of thermal impedance junction to ambient versus pulse duration (printed circuit board epoxy FR4)
Zth(j-a) (C/W)
1000.0
Free air
100.0
0.6 0.4 0.2 0.0 0 25 50 75 100 125 150
10.0
Tamb(C)
1.0 1.E-02 1.E-01 1.E+00
tp(s)
1.E+01 1.E+02 1.E+03
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Fig. 5: Thermal resistance junction to ambient versus copper surface under each lead.
Rth(j-a)
110 100 90 80 70 60 50 40
1.E-04 1.E-03 1.E-02
Tj=100C
Fig. 6-1: Reverse leakage current versus reverse voltage applied (typical values, for Transil).
IR(A)
1.E+00
Lleads=10mm
Tj=150C
1.E-01
Tj=125C
30 20 10 0 0 1 2 3 4 5 6 7 8 9 10
1.E-05
Tj=25C
S(cm)
1.E-06 10 20 30 40 50 60 70
VR(V)
80 90 100 110 120 130 140 150
Fig. 6-2: Reverse leakage current versus reverse voltage applied (typical values, for diode).
IR(A)
1.E+02
Tj=150C
Fig. 7: Transient peak forward voltage versus dIF/dt (90% confidence).
VFP(V)
50 45 40
IF=3A Tj=125C
1.E+01
Tj=125C
35 30 25
1.E+00
Tj=100C
1.E-01
Tj=25C
20 15 10
1.E-02
VR(V)
1.E-03 0 50 100 150 200 250 300 350 400 450 500 550 600 650 700
5 0 0 50 100 150
dIF/dt(A/s)
200 250 300 350 400 450 500
Fig. 8: Clamping voltage versus peak pulse current (maximum values).
Ipp(A)
10.0
tp<500ns
Fig. 9: Junction capacitance versus reverse voltage applied on clamping characteristic (typical values).
C(pF)
100
F=1MHz Vosc=30mVRMS Tj=25C
Tj=25C Tj=125C
1.0
Vcl(V)
0.1 160 165 170 175 180 185 190 195 200 205 210 215 220
10 1 10
VR(V)
100 1000
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PACKAGE MECHANICAL DATA DO-15 REF.
C A C
DIMENSIONS Millimeters Min. Max.
6.75 3.53 31 0.88
Inches Min.
0.238 0.116 1.024 0.028
Max.
0.266 0.139 1.220 0.035
A B
D
B
6.05 2.95 26 0.71
C D
Ordering type PKC136 PKC136-RL
Marking Partnumber Diode cathode ring Partnumber Diode cathode ring
Package DO-15 DO-15
Weight 0.4g 0.4g
Base qty 1000 6000
Delivery mode Ammopack Tape and reel
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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